Air Pollution Control and Emissions Standards for the Semiconductor Industry Article 2
Terms and symbols used in these Standards are defined as follows:1. “Semiconductor manufacturing industry” mean operators engaging in integrated circuit wafer manufacturing, wafer packaging, epitaxy, photomask manufacturing, lead frame manufacturing, etc.2. “Integrated circuit wafer fabrication” means the operations to produce wafers of various specifications intended for various uses, including physical vapor deposition, chemical vapor deposition, photoresistance, photolithography, etching, diffusion, ion implantation, oxidation, heat treatment and other processes.3. “Integrated circuit wafer package” means the operations to produce semiconductor products from completed wafers intended for various uses, including cutting into dice, followed by welding, electroplating, organic solvent washing, acid washing and other processes.4. “Photoresist” means the acid-resistant photosensitizer required during the selective etching process in the manufacture of integrated circuit wafers.5. “Photoresist process” means the process in which wafers undergo photoresist coating, exposure and development in order to produce various types of circuits on wafers.6. “Volatile Organic Compounds (VOCs)” mean the general designation for air pollutants with an initial boiling point measured below 250 degrees Celsius at one bar pressure, which, however, does not include methane, carbon monoxide, carbon dioxide, carbon disulfide, carbonic acid, carbonate, ammonium carbonate, cyanide, thiocyanide and other compounds.7. “Closed gathering system” means a system that can trap air pollutants emitted or released from processes, pollution sources or equipment components, and keep them from directly contacting the atmosphere. Such system includes gas gathering equipment, pipelines and connecting devices.8. “Discharge reduction rate” means the emission reduction percentage of air pollutants treated by pollution prevention and control equipment, which is calculated based on the concentration and emission volume of exhaust gases at the front end and back end of the pollution prevention and control equipment through synchronous monitoring or detection. The calculation formula is as follows:R: Discharge reduction rate.E: Unit hourly discharge volume of air pollutants before they enter the pollution prevention and control equipment via the closed gas gathering system; the unit is kg/hr.E0: Unit hourly discharge volume of air pollutants directly discharged into the atmosphere through the pollution prevention and control equipment; The unit is kg/hr.9. Existing process means the semiconductor manufacturing process that has been completed, is under construction, has its project bidding process completed, or has the contract for the construction of the project executed without the bidding process prior to the promulgation of these Standards.10. “Newly established process” means the semiconductor process established on the date of promulgation and implementation of these Standards, and the existing semiconductor process complies with the modification conditions stipulated in the Stationary Pollution Source Installation, Operating and Fuel Use Permit Management Regulations Amended Clauses.11. “Annual consumption of volatile organic compounds (VOCs)” means the product of the approved maximum design quantity of all raw materials (supplies) set forth in all fixed pollution source operating permits times the percentage of VOCs in such raw materials (supplies) for any object listed in Paragraph 1 in a single public or private premises; the unit is ton/year.12. “Total plant discharge quantity” means the sum of all individual air pollutants discharged from all discharge pipes within the peripheral boundaries of a single plant per hour; the unit is kg/hr.13. “Effective quarterly monitoring rate” means (hours of pollution source operations per quarter - hours of flowmeter or concentration monitor failure during pollution source operations per quarter)/hours of pollution source operations per quarter.14. Flowmeter means any facility that can directly or indirectly measure the volume flow rate of exhaust gas emissions.Article 2.pdf
中文原文 半導體製造業空氣污染管制及排放標準第2條
（因條文排版無法完整呈現內容，請詳閱完整條文檔案）本標準用詞及符號，定義如下：
一、半導體製造業：指從事積體電路晶圓製造、晶圓封裝、磊晶、光罩製造、導線架製造等作業者。
二、積體電路晶圓製造作業（WaferFabrication）：指將各種規格晶圓生產各種用途之晶圓之作業，包括經由物理氣相沈積（PhysicalVaporDeposition）、化學氣相沈積（ChemicalVaporDeposition）、光阻、微影（Photolithography）、蝕刻（Etching）、擴散、離子植入（IonImplantation）、氧化與熱處理等製程。
三、積體電路晶圓封裝作業（WaferPackage）：指將製造完成之各種用途之晶圓生產成為半導體產品之作業，包括經由切割成片狀的晶粒（Dice），再經焊接、電鍍、有機溶劑清洗和酸洗等製程。
四、光阻劑：指實施積體電路晶圓製造之選擇蝕刻時，所需耐酸性之感光劑。
五、光阻製程：指晶圓經過光阻劑的塗佈、曝光、顯像，使晶圓上形成各類型電路的製程。
六、揮發性有機物：指在一大氣壓下，測量所得初始沸點在攝氏二百五十度以下有機化合物之空氣污染物總稱。
但不包括甲烷、一氧化碳、二氧化碳、二硫化碳、碳酸、碳酸鹽、碳酸銨、氰化物及硫氰化物等化合物。
七、密閉集氣系統：指可將製程、污染源或設備元件排出或逸散出之空氣污染物，捕集並使傳送之氣體不直接與大氣接觸之系統。
該系統包括集氣設備、管線及連接裝置。
八、排放削減率：指空氣污染物經污染防制設備處理後之排放量削減百分比，依同步監測或檢測污染防制設備前端及後端廢氣濃度及排放量進行計算，其計算公式如下：
九、既存製程：指本標準發布施行日前已建造完成、建造中、已完成工程招標程序或未經招標程序已訂立工程施作契約之半導體製造業製程。
十、新設製程：指本標準發布施行日起設立之半導體製程，及既存半導體製程符合固定污染源設置操作及燃料使用許可證管理辦法規定之變更條件者。
十一、揮發性有機物原（物）料年用量：指單一公私場所屬第一款所列對象，其所有固定污染源操作許可證登載之各項原（物）料許可核定最大設計量乘以各該項原（物）料揮發性有機物成分百分比後之加總；其單位為公噸／年。
十二、工廠總排放量：指同一廠場周界內每小時所有排放管道排放單一空氣污染物之總和；單位為kg／hr。
十三、每季有效監測率：（每季污染源操作小時數-每季污染源操作期間流量計或濃度監測器失效小時數）／每季污染源操作小時數。
十四、流量計：任何可直接或間接測得廢氣排放體積流量之設施。
一、半導體製造業：指從事積體電路晶圓製造、晶圓封裝、磊晶、光罩製造、導線架製造等作業者。
二、積體電路晶圓製造作業（WaferFabrication）：指將各種規格晶圓生產各種用途之晶圓之作業，包括經由物理氣相沈積（PhysicalVaporDeposition）、化學氣相沈積（ChemicalVaporDeposition）、光阻、微影（Photolithography）、蝕刻（Etching）、擴散、離子植入（IonImplantation）、氧化與熱處理等製程。
三、積體電路晶圓封裝作業（WaferPackage）：指將製造完成之各種用途之晶圓生產成為半導體產品之作業，包括經由切割成片狀的晶粒（Dice），再經焊接、電鍍、有機溶劑清洗和酸洗等製程。
四、光阻劑：指實施積體電路晶圓製造之選擇蝕刻時，所需耐酸性之感光劑。
五、光阻製程：指晶圓經過光阻劑的塗佈、曝光、顯像，使晶圓上形成各類型電路的製程。
六、揮發性有機物：指在一大氣壓下，測量所得初始沸點在攝氏二百五十度以下有機化合物之空氣污染物總稱。
但不包括甲烷、一氧化碳、二氧化碳、二硫化碳、碳酸、碳酸鹽、碳酸銨、氰化物及硫氰化物等化合物。
七、密閉集氣系統：指可將製程、污染源或設備元件排出或逸散出之空氣污染物，捕集並使傳送之氣體不直接與大氣接觸之系統。
該系統包括集氣設備、管線及連接裝置。
八、排放削減率：指空氣污染物經污染防制設備處理後之排放量削減百分比，依同步監測或檢測污染防制設備前端及後端廢氣濃度及排放量進行計算，其計算公式如下：
九、既存製程：指本標準發布施行日前已建造完成、建造中、已完成工程招標程序或未經招標程序已訂立工程施作契約之半導體製造業製程。
十、新設製程：指本標準發布施行日起設立之半導體製程，及既存半導體製程符合固定污染源設置操作及燃料使用許可證管理辦法規定之變更條件者。
十一、揮發性有機物原（物）料年用量：指單一公私場所屬第一款所列對象，其所有固定污染源操作許可證登載之各項原（物）料許可核定最大設計量乘以各該項原（物）料揮發性有機物成分百分比後之加總；其單位為公噸／年。
十二、工廠總排放量：指同一廠場周界內每小時所有排放管道排放單一空氣污染物之總和；單位為kg／hr。
十三、每季有效監測率：（每季污染源操作小時數-每季污染源操作期間流量計或濃度監測器失效小時數）／每季污染源操作小時數。
十四、流量計：任何可直接或間接測得廢氣排放體積流量之設施。